Research on high dynamic pixel structure based on adaptive integral capacitor

Abstract

Infrared image sensing technology has attracted wide attention due to its advantages such as being unaffected by the environment, good target recognition, and strong anti-interference ability. However, with the improvement of the integration of infrared focal planes, the constraints between the dynamic range, noise, and full-shade of the optoelectronic system are particularly prominent. Therefore, in order to solve the contradiction between noise in weak light and full-shade capacity in strong light, in a 5 T infrared pixel circuit, the relationship between the capacitance value and voltage of the inverted MOS capacitor in a specific voltage range is used to make the integral capacitance of the infrared image sensor automatically change from 6.5 fF to 37.5 fF. A high dynamic pixel structure based on adaptive integral capacitance is proposed. Based on 55 nm CMOS process technology, 12288 × 12288its performance parameters are studied in a pixel-scale infrared sensor. The research results show that 5.5m × 5.5mthe small-size pixel has a large full-shade capacity of 1.31 Me- and a variable conversion gain, a noise of less than 0.43 e, and a dynamic range of more than 130 dB.